1. K. J. Seo, X. Han, Y. Qiang, X. Zhao, Y. Zhong, Z. Shi, and H. Fang*, “Wafer-scale, Stretchable Nanomeshes from an Ultrathin-Support-Layer Assisted Transfer”, submitted.
  2. Y. Qiang, P. Artoni, K. J. Seo, S. Culaclii, V. Hogan, X. Zhao, Y. Zhong, X. Han, P.-M. Wang, Y.-K. Lo, Y. Li, H. A. Patel, Y. Huang, A. Sambangi, J. S. V. Chu, W. Liu, M. Fagiolini*, H. Fang*, “Transparent Arrays of Bilayer-Nanomesh Microelectrodes for Simultaneous Electrophysiology and 2-Photon Imaging in the Brain”, submitted.
  3. G. Conti, S. Nemšák, C.-T. Kuo, M. Gehlmann, C. Conlon, A. Keqi, A. Rattanachata, O. Karslıoğlu, J. Mueller, J. Sethian, H. Bluhm, J. E. Rault, J. P. Rueff, H. Fang, A. Javey, and C. S. Fadley, “Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy“, APL Materials, 6, 058101 (2018).


  1. Y. Qiang, K. J. Seo, X. Zhao, P. Artoni, N. Golshan, S. Culaclii, P.-M. Wang, W. Liu, K. S. Ziemer, M. Fagiolini, and H. Fang*, “Bilayer Nanomesh Structures for Transparent Recording and Stimulating Microelectrodes“, Advanced Functional Materials, 1704117, 2017.
  2. K.J. Seo, Y. Qiang, I. Bilgin, S. Kar, C. Vinegoni, R. Weissleder, and H. Fang*, “Transparent Electrophysiology Microelectrodes and Interconnects from Metal Nanomesh”ACS Nano, 11, 4365–4372, 2017.
  3. H. Fang, K.J. Yu, C. Gloschat, Z. Yang, E. Song, C.-H. Chiang, J. Zhao, S.M. Won, S. Xu, M. Trumpis, Y. Zhong, S.W. Han, Y. Xue, D. Xu, S.W. Choi, G. Cauwenberghs, M. Kay, Y. Huang, J. Viventi, I.R. Efimov and J.A. Rogers, “Capacitively Coupled Arrays of Multiplexed Flexible Silicon Transistors for Long-Term Cardiac Electrophysiology“, Nature Biomedical Engineering, 1, 0038, 2017.
  4. J-K Chang, H. Fang, C.A. Bower, E. Song, X. Yu, and J.A. Rogers, “Materials and processing approaches for foundry-compatible transient electronics“, PNAS, 114(28), E5522-E5529, 2017.
  5. E. Song, Y.K. Lee, R. Li, J. Li, X. Jin, K. J. Yu, Z. Xie, H. Fang, Y. Zhong, H. Du, J. Zhang, G. Fang, Y. Kim, Y. Yoon, M. A Alam, Y. Mei, Y. Huang, J.A. Rogers, “Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants“, Advanced Functional Materials,  1702284, 2017.
  6. X. Jin, C. Jiang, E. Song, H. Fang, J. A. Rogers, and M. A. Alam, “Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems“, IEEE Transactions on Electron Devices, 64, 3443-3451, 2017.
  7. E. Song, H. Fang, X. Jin, J. Zhao, C. Jiang, K. J. Yu, Y. Zhong, D. Xu, J. Li, G. Fang, H. Du, J. Zhang, J. M. Park, Y. Huang, M. A. Alam, Y. Mei, J. A. Rogers, “Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems”, Advanced Electronic Materials, 1700077, 2017.
  8. X. Li, L. Tao, Z. Chen, H. Fang, X. Li, X. Wang, J.-B. Xu, and H. Zhu, “Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics”, Applied Physics Reviews, 4, 021306 2017.


  1. H. Fang, J. Zhao, K. Yu, E. Song, A.B. Farimani, C.H. Chiang, X. Jin, Y. Xue, D. Xu, W. Du, K.J. Seo, Y. Zhong, Z. Yang, S. Won, G. Fang, S.W. Choi, S. Chaudhuri, Y. Huang, M. Ashraful Alam, J. Viventi, N.R. Aluru, J.A. Rogers, “Ultra-thin, Transferred Layers of Thermally Grown Silicon Dioxide as Biofluid Barriers for Bio-Integrated Flexible Electronic Systems“, PNAS, 113, 11682-11687, 2016.
  2. K.J. Yu, D. Kuzum, S.-W. Hwang, B.H. Kim, H. Juul, N.H. Kim, S.M. Won, K. Chiang, M.
    Trumpis, A.G. Richardson, H. Cheng, H. Fang, M. Thompson, H. Bink, D. Talos, K.J. Seo, H.N. Lee, S.-K. Kang, J.-H. Kim, J.Y. Lee, Y. Huang, F.E. Jensen, M.A. Dichter, T.H. Lucas, J. Viventi, B. Litt and J.A. Rogers, “Bioresorbable Silicon Electronics for Transient Spatiotemporal Mapping of Electrical Activity from the Cerebral Cortex“, Nature Materials, 15, 782-791, 2016.
  3. L. Gao, Y. Zhang, H. Zhang, S. Doshay, X. Xie, H. Luo, D. Shah, Y. Shi, S. Xu, H. Fang, J.A. Fan, P. Nordlander, Y. Huang and J.A. Rogers, “Optics and Nonlinear Buckling Mechanics in Large-Area, Highly Stretchable Arrays of Plasmonic Nanostructures“, ACS Nano, 9(6), 5968-5975, 2015.
  4. T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo,and A. Javey, “Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors“, ACS Nano, 9(2), 2071–2079, 2015.
  5. P. Zhao, S. Desai, M. Tosun, T. Roy, H. Fang, A. Sachid, M. Amani, C. Hu, A. Javey, “2D Layered Materials: From Materials Properties to Device Applications“, IEEE IEDM, 27.3.1 – 27.3.4, 2015
  6. H. Fang, C. Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J.S. Kang, H.A. Bechtel, S.B. Desai, F. Kronast, A.A. Unal, G. Conti, C. Conlon, G.K. Palsson, M.C. Martin, A.M. Minor, C.S. Fadley, E. Yablonovitch, R. Maboudian, A. Javey. “Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides“, PNAS, 111 (17), 6198-6202, 2014.
  7. S.B. Desai, G. Seol, J.S. Kang, H. Fang, C. Battaglia, R. Kapadia, J.W. Ager, J. Guo, and A. Javey. “Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2 “, Nano Letters, 14 (8), 4592–4597, 2014.
  8. M. Tosun, S. Chuang, H. Fang, A.B. Sachid, M. Hettick, Y. Lin, Y. Zeng, A. Javey. “High Gain Inverters Based on WSe2 Complementary Field-Effect Transistors“, ACS Nano, 8(5), 4948–4953, 2014.
  9. S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J.S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R.M. Wallace, A. Javey, “MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts“, Nano Letters, 14 (3), 1337–1342, 2014.
  10. H. Fang, H.A. Bechtel, E. Plis, M.C. Martin, S. Krishna, E. Yablonovitch, A. Javey, “Quantum of Optical Absorption in Two-Dimensional Semiconductors“, PNAS, 110, 11688-11691, 2013.
  11. H. Fang, M. Tosun, G. Seol, T-C. Chang, K. Takei, J. Guo, A. Javey. “Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium“, Nano Letters, 13, 1991-1995, 2013.
  12. S. Chuang, R. Kapadia, H. Fang, T.C. Chang, W.-C. Yen, Y.-L. Chueh, A. Javey, “Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes“, Applied Physics Letters, 102, 242101, 2013. (cover article).
  13. K. Takei, R. Kapadia, H. Fang, E. Plis, S. Krishna, A. Javey, “High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics“, Applied Physics Letters, 102, 153513, 2013.
  14. H. Fang, S. Chuang, T.C. Chang, K. Takei, T. Takahashi, A. Javey, “High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts“, Nano Letters, 12, 3788-3792, 2012.
  15. J. Nah, H. Fang, C. Wang, K. Takei, M.H. Lee, E. Plis, S. Krishna, A. Javey, “III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates“, Nano Letter, 12, 3592-3595, 2012.
  16. H.Fang, S.Chuang, K.Takei, H.S.Kim, E.Plis, C.-H.Liu, S.Krishna, Y.-L.Chueh, A. Javey, “Ultrathin-Body, High-Mobility InAsSb-on-Insulator Field-Effect Transistors“, IEEE EDL, 33(4), 504-506, 2012.
  17. C. Wang, J.-C. Chien, H. Fang, K. Takei, J. Nah, E. Plis, S. Krishna, A.M. Niknejad, A. Javey. “Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates“, Nano Letters, 12, 4140-4145, 2012.
  18. J. Nah, S.B. Kumar, H. Fang, Y.-Z. Chen, E. Plis, Y.-L. Chueh, S. Krishna, J. Guo, A. Javey, “Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors“, Journal of Physical Chemistry C, 116, 9750–9754, 2012.
  19. K. Takei, M. Madsen, H. Fang, R. Kapadia, S. Chuang, H.S. Kim, C.-H. Liu, E. Plis, J. Nah, S. Krishna, Y.-L. Chueh, J. Guo, A. Javey, “Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors“, Nano Letters, 12, 2060-2066, 2012.
  20. K. Takei, H. Fang, S.B. Kumar, R. Kapadia, Q. Gao, M. Madsen, H.S. Kim, C.-H. Liu, Y.-L. Chueh, E. Plis, S. Krishna, H.A. Bechtel, J. Guo, A. Javey.”Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes“, Nano Letters, 11, 5008–5012, 2011.
  21. H. Fang, M. Madsen, C. Carraro, K. Takei, H.S. Kim, E. Plis, S.-Y. Chen, S. Krishna, Y.-L. Chueh, R. Maboudian, A. Javey. “Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator“, Applied Physics Letters, 98, 012111, 2011.
  22. M. Madsen, K. Takei, R. Kapadia, H. Fang, H. Ko, T. Takahashi, A.C. Ford, M.H. Lee, A. Javey. “Nanoscale Semiconductor “X” on Substrate “Y” – Processes, Devices and Applications“, Advanced Materials, 23, 3115–3127, 2011.
  23. K. Takei, S. Chuang, H. Fang, R. Kapadia, C.-H. Liu, J. Nah, H.S. Kim, E. Plis, S. Krishna, Y.-L. Chueh, A. Javey. “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness“, Applied Physics Letters, 99, 103507, 2011.
  24. B. Cheng, H. Fang, J. Lan, Y. Liu, Y.-H. Lin, C.-W. Nan. “Thermoelectric Performance of Zn and Ge Co-Doped In2O3 Fine-Grained Ceramics by the Spark Plasma Sintering“, Journal of the American Ceramic Society, 94 (8), 2279–2281, 2011.
  25. H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P.W. Leu, K. Ganapathi, E. Plis, H.S. Kim, S.-Y. Chen, M. Madsen, A.C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, A. Javey. “Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors“, Nature, 468, 286–289, 2010.
  26. O. Ergen, D.J. Ruebusch, H. Fang, A.A. Rathore, R. Kapadia, Z. Fan, K. Takei, A. Jamshidi, M. Wu, A. Javey. “Shape-Controlled Synthesis of Single-Crystalline Nanopillar Arrays by Template-Assisted Vapor-Liquid-Solid Process“, Journal of the American Chemical Society, 132 (40), 13972–13974, 2010.
  27. M. Zheng, K. Takei, B. Hsia, H. Fang, X. Zhang, N. Ferralis, H. Ko, Y.-L. Chueh, Y. Zhang, R. Maboudian and A. Javey. “Metal-Catalyzed Crystallization of Amorphous Carbon to Graphene“, Applied Physics Letters, 96, 063110, 2010.
  28. J. Lan, Y.H. Lin, H. Fang, A. Mei, C.W. Nan, Y. Liu, S. Xu, M. Peters. “High‐Temperature Thermoelectric Behaviors of Fine‐Grained Gd‐Doped CaMnO3 Ceramics“, Journal of the American Ceramic Society, 93(8), 2121-2124, 2010.

denotes equal contributions.

* denotes corresponding author(s).

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