Nian Sun

Multiferroic Heterostructures and Low-Power Devices for Sensing, Power, RF and Microwave Electronics

The coexistence of electric polarization and magnetization in multiferroic materials provides great opportunities for realizing magnetoelectric coupling, including electric field control of magnetism, or vice versa, through a strain mediated magnetoelectric interaction effect in layered magnetic/ferroelectric multiferroic heterostructures [1-7]. Strong magnetoelectric coupling has been the enabling factor for different multiferroic devices, which however has been elusive, particularly at RF/microwave frequencies. In this presentation, I will cover the most recent progress on novel layered microwave multiferroic heterostructures and devices, which exhibit strong magnetoelectric coupling.

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