Past Events
Time: 10:00 am - 11:00 am
Location: Egan Center 406
Speaker: Prof. Yong-Kyu Yoon, State University of New York at Buffalo
Abstract
Microelectromechanical Systems (MEMS)/nanotechnology as an enabling technology is extensively researched in broad areas including radio frequency (RF), optical, biomedical, and material science and engineering. In this seminar, a focus is given to the research on advanced RF and microwave components using MEMS and nanotechnology in the Multidisciplinary nano and Microsystems (MnM) laboratory at UB. First, recently developed multidirectional ultraviolet (UV) lithography for polymeric three dimensional (3-D) microstructures is introduced. In combination with the newly developed polymer-core conductor process, high-efficiency, integrable, air-lifted RF components such as millimeter wave monopole and Yagi-Uda antennas for inter-/intra- chip communication are demonstrated. A large 10dB radiation bandwidth of 5~20% has been achieved. Second, a current intriguing topic of memtamaterial and its implementation using micro-/nanomachining are discussed. Highly periodic micro structures by 3-D UV lithography for microwave applications, and highly periodic nano structures by multibeam interference lithography and anodized aluminum oxide processes for optical applications are demonstrated. Also, a compact power divider using composite right/left handed transmission line is introduced, where a significant size reduction by 75% is achieved. Third, ferroelectric nano film formation and its tunable RF capacitor applications are demonstrated. A smart substrate - a barium strontium titanate (BST) nano film coated sapphire substrate - has been implemented and it is utilized for a tunable ferroelectric capacitor. An architecture of a tunable RF capacitor with reduced intermodulation distortion (IMD) has been proposed. The device concept and implementation has been successfully demonstrated. The third harmonic input intercept power (IIP3) value of the proposed structure is superior to that of a conventional narrow gap capacitor by more than a decade.